Characterization of Directionally Solidified B_4C-SiC Composites Prepared by a Floating Zone Method

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Directionally solidified B<SUB>4</SUB>C–SiC composites were prepared by a Floating Zone method. The lamellar texture was observed at 53 mol%SiC . The <I>c</I>-axis of B<SUB>4</SUB>C phase was tilted 20<SUP>°</SUP> to the growth direction. The (102) plane and [\\bar1\\bar21] direction of the B<SUB>4</SUB>C phase were parallel to the (311) plane and [12\\bar1] direction of the SiC phase, respectively. The thermal conductivity of the composite parallel to the growth direction (κ<SUB>||</SUB>) was about twice as great as that of monolithic B<SUB>4</SUB>C . The anisotropy of electrical conductivity and thermal conductivity were explained by a mixing law using the values of B<SUB>4</SUB>C and SiC . The mass gain due to oxidation was about 1/3 to 1/5 less than that of monolithic B<SUB>4</SUB>C at 1023 K . The surface perpendicular to the growth direction showed slightly better oxidation resistance than that parallel to the growth direction. The microhardness of the composite was almost the same as that of B<SUB>4</SUB>C.

収録刊行物

  • Materials transactions

    Materials transactions 43(9), 2309-2315, 2002-09-01

    日本金属学会

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各種コード

  • NII論文ID(NAID)
    10012326368
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6313366
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  IR  J-STAGE 
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