Preparation of N-type Silicon Carbide-Based Thermoelectric Materials by Spark Plasma Sintering
The SiC/Si<SUB>3</SUB>N<SUB>4</SUB> sintered materials were prepared by Spark Plasma Sintering at 2000°C. The crystal structure of sintered materials is cubic β-SiC type with relative density higher than 80%. All sintered materials show n-type conduction and the carrier concentration increases with increasing Si<SUB>3</SUB>N<SUB>4</SUB> concentration. Seebeck coefficient α and electrical conductivity σ increased with increasing temperature indicating suitable for high temperature thermoelectric conversion. Thermoelectric properties are improved by addition of Si<SUB>3</SUB>N<SUB>4</SUB> and the power factor α<SUP>2</SUP>σ takes a maximum value at SiC–7 mass%Si<SUB>3</SUB>N<SUB>4</SUB>.
- Materials transactions
Materials transactions 43(12), 3239-3241, 2002-12-01