Preparation of N-type Silicon Carbide-Based Thermoelectric Materials by Spark Plasma Sintering

• Kitagawa Hiroyuki

  Department of Materials Science, Shimane University

• Kado Naomi

  Department of Materials Science, Shimane University

• Noda Yasutoshi

  Department of Materials Science, Shimane University

Abstract

The SiC/Si₃N₄ sintered materials were prepared by Spark Plasma Sintering at 2000°C. The crystal structure of sintered materials is cubic β-SiC type with relative density higher than 80%. All sintered materials show n-type conduction and the carrier concentration increases with increasing Si₃N₄ concentration. Seebeck coefficient α and electrical conductivity σ increased with increasing temperature indicating suitable for high temperature thermoelectric conversion. Thermoelectric properties are improved by addition of Si₃N₄ and the power factor α²σ takes a maximum value at SiC–7 mass%Si₃N₄.

Journal

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 43 (12), 3239-3241, 2002

  The Japan Institute of Metals and Materials

Keywords

• silicon carbide
• thermoelectric material
• spark plasma sintering
• density
• Seebeck coefficient
• electrical conductivity

Details

• CRID: 1390001204251630336
• NII Article ID: 10012329666
• NII Book ID: AA1151294X
• DOI: 10.2320/matertrans.43.3239
• COI: 1:CAS:528:DC%2BD3sXhtF2msbk%3D
• ISSN: 13475320
• ISSN: 13459678
• NDL BIB ID: 6395719
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6395719
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/43/12/43_12_3239/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed