Electronic States Origin of Field Emission of Silicon Clusters

• Araidai Masaaki

  Department of Physics, Faculty of Science, Tokyo University of Science Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation

• Yamauchi Akihiro

  Department of Physics, Faculty of Science, Tokyo University of Science

• Watanabe Kazuyuki

  Department of Physics, Faculty of Science, Tokyo University of Science Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation

抄録

The electronic states origin of the field emission of silicon clusters as a model system of covalent-bond nanostructures is elucidated by time-dependent density-functional calculations. The local electronic properties, σ- or π-bonding states of silicon clusters, are crucial for understanding the field emission characteristics. The findings in this study provide a theoretical basis for understanding and designing Si- and C-based nanostructured field emitters.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (10), 6502-6503, 2003

  The Japan Society of Applied Physics

キーワード

• <I>ab initio</I> calculation
• field emission
• atomic clusters
• electronic states
• time-dependent density-functional theory

詳細情報

• CRID: 1390001206264814464
• NII論文ID: 10012449352
• NII論文ID: 210000054312
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.42.6502
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/42/i=10R/a=6502/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可