Photomodulated Second-Harmonic Generation at Silicon-Silicon Oxide Interfaces: From Modeling to Application

• Mishina Elena D.

  Moscow Institute of Radioengineering, Electronics and Automation, prosp. Department of Chemistry, Faculty of Science, Saitama University

• Tanimura Nobuko

  Department of Chemistry, Faculty of Science, Saitama University

• Nakabayashi Seiichiro

  Department of Chemistry, Faculty of Science, Saitama University

• Aktsipetrov Oleg A.

  Physics Department, Moscow State University

• Downer Michael C.

  Texas Material Institute, University of Texas

Abstract

A photomodulation technique based on the nonlinear-optical process of second-harmonic generation (SHG) is developed for characterizing Si/SiO₂ interfaces and silicon-based metal-oxide-semiconductor (MOS) structures. The mechanisms of photoinduced SHG are discussed and a quantitative model of the SHG response is formulated. A method of extracting parameters of the Si/SiO₂ interface from in situ-photomodulated-SHG measurements is proposed. The accuracy of the technique for measuring parameters of silicon-based MOS structures is estimated.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (11), 6731-6736, 2003

  The Japan Society of Applied Physics

Keywords

• MOS structure
• photomodulation
• nonlinear optics

Details

• CRID: 1390282681241229440
• NII Article ID: 210000054363
• NII Article ID: 10012563486
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.42.6731
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 6751889
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6751889
• Web Site: http://stacks.iop.org/1347-4065/42/i=11R/a=6731/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed