Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom

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著者

    • Lin Ming-Jang Lin Ming-Jang
    • Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
    • Cheng Huang-Chung
    • Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

抄録

Power devices with a high switching speed and a low conduction resistance are crucially important in power conversion circuits. In this study, a trench-gate power metal–oxide–semiconductor field effect transistor (MOSFET) with a high-density cell design 20.6 Mcell/cm2 was implemented for the first time using multilayer dielectrics with an oxide–nitride–oxide (ONO) structure at the bottom of the trench. The thick ONO dielectric layers at the bottom of the trench compensate for the increase in Miller capacitance per unit area as the cell density increases. The resulting device exhibits excellent characteristics of gate charge, switching power loss, gate oxide quality and practical process stability, superior to those of the conventional structure. An n-channel 25.8 V trench gate MOSFET with a specific on-resistance of 0.15 m$\Omega$m2, and $R_{\text{ON}}\times Q_{\text{GD}}$ figure-of-merit 41 m$\Omega$$\cdot$nC is presented.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 6795-6799, 2003-11-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10012563729
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6752110
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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