Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K

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著者

    • Tokuda Yutaka
    • Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
    • Kanazawa Shigeki
    • Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
    • Iwata Hiroyuki
    • Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan

抄録

We report on the first observation of metastable defects in n-type silicon implanted with 90 keV hydrogen ions at 88 K at a dose of $2\times 10^{10}$ cm-2. Schottky contacts were fabricated on the implanted surfaces to study room-temperature stable defects by deep-level transient spectroscopy. After reverse-bias cooling, three new peaks ($E_{\text{c}}$—0.29, 0.41, 0.55 eV) appear in addition to well-known defects. Metastable defects are hydrogen-related and their production rates are higher in the 88 K implantation than in the room-temperature implantation.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 6833-6834, 2003-11-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10012563862
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  CJP引用  J-STAGE  JSAP 
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