Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures

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著者

    • Lee Nam-Yeal Lee Nam-Yeal
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Yoon Sung-Min Yoon Sung-Min
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • You In-Kyu [他] You In-Kyu
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Ryu Sang-Ouk
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Cho Seong-Mok
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Shin Woong-Chul
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Choi Kyu-Jung
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Kim Kwi-Dong
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Yu Byoung-Gon
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea

抄録

We successfully fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures using Bi3.465La0.85Ti3O12 (BLT) ferroelectric thin films and SiO2/Si3N4/SiO2 (ONO) stacked buffer layers for single-transistor-type ferroelectric nonvolatile memory applications. The BLT films were deposited on the prepared Pt/Ti/SiO2/Si and ONO/Si substrates by a sol–gel spin-coating method. The dielectric constant and the leakage current density of the prepared ONO film were measured to be 5.6 and $1.0\times 10^{-9}$ A/cm2 at 3 MV/cm, respectively. We found that the material and electrical properties of the BLT films were effectively modulated by the crystallographic orientation control of the thin films, which were strongly affected by the first annealing process at relatively low temperature. While the fabricated MFIS capacitors using (117)-oriented BLT films showed a charge injection phenomenon in $C$–$V$ properties at high operating voltage, $c$-axis-oriented BLT-loaded MFIS capacitors showed a memory window of 0.6 V even at a voltage sweep of $\pm 8$ V. We conclude from these results that the $c$-axis-oriented BLT films formed by the newly proposed fabrication method can be successfully applied to single-transistor-type ferroelectric memory cells.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 6955-6959, 2003-11-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10012564300
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6752706
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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