Dielectric Properties of Ba(Ti0.85Zr0.15)O3 Film Prepared by Metalorganic Chemical Vapor Deposition

• Tohma Tetsuro

  Institute for Materials Research, Tohoku University

• Masumoto Hiroshi

  Institute for Materials Research, Tohoku University

• Goto Takashi

  Institute for Materials Research, Tohoku University

Bibliographic Information

Other Title

• Dielectric Properties of Ba(Ti_0.85Zr_0.15)O₃Film Prepared by Metalorganic Chemical Vapor Deposition

Abstract

Ba(Ti_0.85Zr_0.15)O₃ films were prepared at 973 K on (100)Pt/(100)MgO substrates by metalorganic chemical vapor deposition (MOCVD), and their dielectric properties were investigated. The dielectric constant (ε′) of the film changed depending on the ac electric field (E_ac) and frequency at temperatures below 400 K. The ε′ showed a broad maximum at a specific temperature (T_M) that decreased from 370 to 330 K with increasing E_ac from 0.15×10⁵ to 15×10⁵ V·m⁻¹. The film exhibited ferroelectric characteristics with remanent polarization (2P_r) of 3×10⁻² C·m⁻² and coercive field (2E_C) of 14×10⁵ V·m⁻¹.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (11), 6969-6972, 2003

  The Japan Society of Applied Physics

Keywords

• barium titanate
• barium zirconate
• Ba(Ti<SUB>0.85</SUB>Zr<SUB>0.15</SUB>)O<SUB>3</SUB>
• MOCVD
• relaxor
• dielectric properties
• ferroelectric
• film
• domain
• scanning nonlinear dielectric microscopy

Details

• CRID: 1390001206264481920
• NII Article ID: 210000054416
• NII Article ID: 10012564341
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.42.6969
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 6752765
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6752765
• Web Site: http://stacks.iop.org/1347-4065/42/i=11R/a=6969/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed