Heteroepitaxy of Hexagonal ZnS Thin Films Directly on Si (111)

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著者

    • Yoo Young-Zo Yoo Young-Zo
    • National Institute for Materials Science, Nanomaterials Assembly Group, 1-2-1, Sengen Tsukuba 305-0044, Japan
    • Onuma Takeyohi
    • Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
    • Chichibu Shigefusa
    • Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
    • Koinuma Hideomi
    • Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan

抄録

Epitaxial Wurtzite ZnS (W-ZnS) films were grown directly on Si (111) at temperatures as high as 800°C by pulsed laser deposition. A detailed deconvolution method was used to discriminate the ZnS reflection from superimposed peaks overlapped by both ZnS and Si peaks in X-ray measurement. From the peak deconvolution, the rocking full width at half maximum and lattice constant of the ZnS film were determined to be 0.28° and 6.26 Å, respectively. A tilt between W-ZnS and Si was observed and the tilt angle decreased with increasing growth temperature. The W-ZnS (0001) film on Si (111) showed the epitaxial relationship of Si [220]//ZnS[$10\bar{1}5$]. An X-ray diffraction scan along the L direction in reciprocal space and a high-resolution transmission electron microscopy image revealed that the W-ZnS film partially had stacking fault domains in the hexagonal phase. Free excitonic emission from the W-ZnS film was observed at 4 K.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 7029-7032, 2003-11-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10012564575
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6752884
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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