Hillock Formation of SnO2 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition

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著者

    • Park Kyung-Hee
    • Research Institute of Energy Resources Technology, Chosun University, 375 Seosuk-dong, Gwangju 501-759, Korea
    • Ryu Hyun-Wook
    • Research Institute of Energy Resources Technology, Chosun University, 375 Seosuk-dong, Gwangju 501-759, Korea
    • Seo Yong-Jin
    • Daebul University, 72 Samho-myeon, Yeongam-gun 526-702, Korea
    • Lee Woo-Sun
    • Chosun University, 375 Seosuk-dong, Gwangju 501-759, Korea

抄録

SnO2 thin films were deposited at 375°C on an alumina substrate by metal-organic chemical vapor deposition (MOCVD). The number of hillocks on the thin-film surface increased with air annealing. The oxygen content and binding energy during air annealing at 500°C came close to those of stoichiometric SnO2. The cauliflower-like hillocks observed seem to be the result of the continuous migration of tiny grains to release the stress of an expanded grain.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 7071-7072, 2003-11-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10012564738
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  J-STAGE  JSAP 
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