Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N

DOI Web Site Web Site 被引用文献4件 参考文献18件
  • Nikishin Sergey A.
    Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University
  • Kuryatkov Vladimir V.
    Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University
  • Chandolu Anilkumar
    Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University
  • Borisov Boris A.
    Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University
  • Kipshidze Gela D.
    Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University
  • Ahmad Iftikhor
    Department of Physics and Nano Tech Center, Texas Tech University
  • Holtz Mark
    Department of Physics and Nano Tech Center, Texas Tech University
  • Temkin Henryk
    Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University

この論文をさがす

抄録

We report a systematic study of the optical properties of superlattices of AlN/Al0.08Ga0.92(In)N with periods in the range of 1.25–2.25 nm. The superlattices were grown on sapphire substrates using gas source molecular beam epitaxy with ammonia. Effective bandgaps between 4.5 eV (276 nm) and 5.3 eV (234 nm), as determined by optical reflectivity measurements, were obtained by adjusting the barrier and well thickness. These superlattices can be doped n- and p-type. We demonstrate double heterostructure light emitting diodes operating at wavelengths as short as 262±2 nm.

収録刊行物

被引用文献 (4)*注記

もっと見る

参考文献 (18)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ