Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N

この論文にアクセスする

この論文をさがす

著者

    • Borisov Boris A.
    • Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas, 79409-3102, U.S.A.
    • Kipshidze Gela D.
    • Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas, 79409-3102, U.S.A.
    • Ahmad Iftikhor
    • Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409-1051, U.S.A.
    • Holtz Mark
    • Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409-1051, U.S.A.
    • Temkin Henryk
    • Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas, 79409-3102, U.S.A.

抄録

We report a systematic study of the optical properties of superlattices of AlN/Al0.08Ga0.92(In)N with periods in the range of 1.25–2.25 nm. The superlattices were grown on sapphire substrates using gas source molecular beam epitaxy with ammonia. Effective bandgaps between 4.5 eV (276 nm) and 5.3 eV (234 nm), as determined by optical reflectivity measurements, were obtained by adjusting the barrier and well thickness. These superlattices can be doped n- and p-type. We demonstrate double heterostructure light emitting diodes operating at wavelengths as short as $262\pm 2$ nm.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 42(11B), L1362-L1365, 2003-11-15

    Japan Society of Applied Physics

参考文献:  18件中 1-18件 を表示

  • <no title>

    KIPSHIDZE G.

    Appl. Phys. Lett. 80, 3682, 2002

    被引用文献2件

  • <no title>

    KIPSHIDZE G

    J. Appl. Phys. 93, 1363, 2003

    被引用文献1件

  • <no title>

    KIPSHIDZE G.

    Phys. Status Solidi A 192, 286, 2002

    被引用文献1件

  • <no title>

    ADIVARAHAN V.

    Jpn. J. Appl. Phys. 41, L435, 2002

    被引用文献2件

  • <no title>

    YASAN A.

    Appl. Phys. Lett 81, 801, 2002

    被引用文献5件

  • <no title>

    CHITNIS A.

    Appl. Phys. Lett. 81, 2938, 2002

    被引用文献2件

  • <no title>

    ZHU K.

    Appl. Phys. Lett. 81, 4688, 2002

    被引用文献3件

  • <no title>

    HANLON A.

    Jpn. J. Appl. Phys. 42, L628, 2003

    被引用文献7件

  • <no title>

    HIRAYAMA H.

    Appl. Phys. Lett. 80, 37, 2002

    被引用文献2件

  • <no title>

    SITAR Z.

    J. Vac Sci. Technol. B 8, 316, 1990

    被引用文献4件

  • <no title>

    KHAN M. A.

    Appl. Phys. Lett. 63, 3470, 1993

    被引用文献2件

  • <no title>

    KURYATKOV V.

    Appl. Phys. Lett. 83, 1319, 2003

    被引用文献1件

  • <no title>

    LO I.

    Appl. Phys. Lett. 80, 2684, 2002

    被引用文献1件

  • <no title>

    NIKISHIN S. A.

    Tech. Dig. 5th Int. Conf. Nitride Semiconductors, Nara, 2003 160, 2003

    被引用文献1件

  • <no title>

    YUN F.

    J. Appl. Phys. 92, 4837, 2002

    被引用文献3件

  • <no title>

    SHATALOV M.

    Appl. Phys. Lett. 82, 167, 2003

    被引用文献2件

  • <no title>

    ADIVARAHAN V.

    Appl. Phys. Lett 81, 3666, 2002

    DOI 被引用文献2件

  • <no title>

    HOLTZ M.

    J. Appl. Phys. 89, 7977, 2001

    DOI 被引用文献3件

被引用文献:  1件中 1-1件 を表示

各種コード

  • NII論文ID(NAID)
    10012565159
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6752266
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
ページトップへ