Characteristics of O($^{3}P$) Density in O2 and Kr Gas Mixture Remote Plasma Oxidation of Silicon Measured by Two-Photon Absorption Laser-Induced Fluorescence

この論文にアクセスする

この論文をさがす

著者

    • Kamioka Isao Kamioka Isao
    • Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
    • Kurihara Kazuaki Kurihara Kazuaki
    • Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

抄録

Characteristics of O($^{3}P$) density in remote O2/Kr gas mixture plasma were studied in a silicon oxidation process using two-photon absorption laser-induced fluorescence. The O($^{3}P$) density strongly depends on the mixing ratio of Kr to O2. The O($^{3}P$) density drastically increased by 60% or more with Kr addition. Remote plasma oxidation was performed at the low substrate temperature of 500°C when O($^{3}P$) density was controlled. We found that the oxidation rate in the remote plasma system was determined solely by the O($^{3}P$) density, regardless of Kr addition and was saturated over the O($^{3}P$) density of 2-$3\times 10^{15}$ (cm-3).

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 42(12A), L1472-L1474, 2003-12-01

    Japan Society of Applied Physics

参考文献:  10件中 1-10件 を表示

  • <no title>

    NAGAMINE N.

    Tech. Dig. Int. Electron Devices Meet., 1998 593, 1998

    被引用文献1件

  • <no title>

    ITOH H.

    Microelectron.Eng. 48, 71, 1999

    被引用文献3件

  • <no title>

    UENO T.

    Jpn. J. Appl. Phys 39, L327, 2000

    被引用文献12件

  • <no title>

    SEKINE K.

    IEEE Trans. Electron Devices 48, 1550, 2001

    被引用文献8件

  • <no title>

    KADOTA K.

    Jpn.J.Appl.Phys. 33, 4308, 1994

    被引用文献2件

  • <no title>

    AMORIM J.

    J. Phys. D 33, R51, 2000

    被引用文献2件

  • <no title>

    AMORIM J.

    J. Appl. Phys. 76, 1487, 1994

    被引用文献2件

  • <no title>

    UI A.

    Proc. 12th Int. Symp. Plasma Processing, 1998 274, 1998

    被引用文献1件

  • <no title>

    WIESE W. L.

    Atomic Transition Probabilities, 1966

    被引用文献3件

  • <no title>

    GROVE A. S.

    Physics and Technology of Semiconductor Devices 22, 1967

    被引用文献1件

各種コード

  • NII論文ID(NAID)
    10012565624
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6770278
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ