Surface Characterization of 3C-SiC Exposed to XeF2

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著者

    • Iida Takashi
    • Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
    • Koide Shunsuke
    • Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
    • Maeta Eri
    • Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
    • Sawabe Kyoichi
    • Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
    • Shobatake Kosuke
    • Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan

抄録

Polycrystalline cubic silicon carbide (3C-SiC) surfaces exposed to XeF2 vapor at $1.8\times 10^{-4}$ Torr at sample temperatures ranging from $T_{\text{s}} = 300$ to 800 K have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning Auger microscopy (SAM). Above $T_{\text{s}} = 520$ K, SiC surface reacts with XeF2 forming volatile SiF4 and a reaction layer that is mainly composed of partially fluorinated C species. As $T_{\text{s}}$ is raised, the reaction layer becomes thicker. The exposure time dependence of the thickness of the reaction layer measured at $T_{\text{s}} = 800$ K gave a rate constant for layer formation as 1.1 μm$\cdot$h-1.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(3A), L346-L348, 2004-03-01

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012704902
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6879170
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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