Observation of Exciton Transition in 1.3–1.55 μm Band from Single InAs/InP Quantum Dots in Mesa Structure

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抄録

Single InAs/InP quantum dots from the O-band (1.3 μm) to the C-band (1.55 μm) were produced in order to realize a quantum information device for optical telecommunication. Our single quantum dot in any band has a sharp and discrete exciton line. To obtain quantum dots with intensive emissions, we applied a 'double-cap' growth technique to metalorganic chemical vapor deposition. To lower fabrication damage to quantum dots, we employed photolithography and wet chemical etching for fabricating 140-nm mesa structure with a quantum dot. Combination of the growth and the fabrication techniques is essential to the good optical property.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(3A), L349-L351, 2004-03-01

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012704917
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6879195
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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