Influence of Substrate Biasing on (Ba,Sr)TiO3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

• Matsumoto Takeshi

  Joining and Welding Research Institute, Osaka University

• Niino Atsushi

  Joining and Welding Research Institute, Osaka University

• Ohtsu Yasunori

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Misawa Tatsuya

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Yonesu Akira

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Ryukyu University

• Fujita Hiroharu

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Miyake Shoji

  Joining and Welding Research Institute, Osaka University

Bibliographic Information

Other Title

• Influence of Substrate Biasing on (Ba,Sr)TiO₃ Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

Abstract

(Ba,Sr)TiO₃ (BST) films were deposited by electron cyclotron resonance (ECR) plasma sputtering with mirror confinement. DC bias voltage was applied to Pt/Ti/SiO₂/Si substrates during deposition to vary the intensity of bombardment of energetic ions and to modify film properties. BST films deposited on the substrates at floating potential (approximately +20 V) were found to be amorphous, while films deposited on +40 V-biased substrates were crystalline in spite of a low substrate temperature below 648 K. In addition, atomic diffusion, which causes deterioration in the electrical properties of the films, was hardly observed in the crystallized films deposited with +40 V bias perhaps due to the low substrate temperature. Plasma diagnoses revealed that application of a positive bias to the substrate reduced the energy of ion bombardment and increased the density of excited neutral particles, which was assumed to result in the promotion of chemical reactions during deposition and the crystallization of BST films at a low temperature.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (3), 1144-1148, 2004

  The Japan Society of Applied Physics

Keywords

• substrate bias
• (Ba,Sr)TiO<SUB>3</SUB> film
• electron cyclotron resonance plasma
• ion bombardment
• physical vapor deposition

Details

• CRID: 1390001206265111296
• NII Article ID: 10012715477
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.43.1144
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 6887663
• Web Site: http://id.ndl.go.jp/bib/6887663
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6887663
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.1144
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.1144/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed