Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) —Investigation of the Crystallographic Structure—
We have investigated crystal defects in the epitaxial layer on nitrogen-doped Czochralski-grown silicon (CZ-Si) substrate. It was found that two types of crystal defects are generated in the epitaxial layer on the nitrogen-doped CZ-Si substrate. One is revealed to be a stacking fault and the other is a perfect dislocation pair. The origin of these defects is a rod like void and a dislocation loop in the nitrogen-doped CZ-Si substrate. We discuss the formation mechanism of the crystal defect in the epitaxial layer caused by the grown-in defect.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(4A), 1241-1246, 2004-04-15
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics