Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate(2)Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping
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- Nakai Katsuhiko
- R&D Group, Wacker NSCE Corporation
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- Kitahara Koichi
- R&D Group, Wacker NSCE Corporation
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- Ohta Yasumitsu
- R&D Group, Wacker NSCE Corporation
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- Ikari Atsushi
- R&D Group, Wacker NSCE Corporation
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- Tanaka Masahiro
- R&D Group, Wacker NSCE Corporation
書誌事項
- タイトル別名
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- Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II)-Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping-
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抄録
Two types of crystal defects, stacking fault induced by a nitrogen-doped substrate (N-SF) and elliptical pit (E-pit), are generated in the epitaxial layer due to grown-in defects in a nitrogen-doped Czochralski-grown silicon (CZ-Si) substrate. We investigate the dependence of N-SF and E-pit formation on the quality of nitrogen-doped substrates. It was revealed that the control of both nitrogen concentration and crystal growth parameter of the CZ-Si ingot is effective for suppressing N-SF and E-pit formation. We also examined crystal defect in the epitaxial layer on a nitrogen and carbon co-doped substrate, which is the other candidate for realizing the epitaxial wafer having a high intrinsic gettering ability. It was clarified that carbon co-doping in addition to nitrogen doping suppresses N-SF and E-pit generation.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (4A), 1247-1253, 2004
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206265146240
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- NII論文ID
- 10012859084
- 210000055173
- 130004531828
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6930894
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可