Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiOx as Gate Dielectrics using Monoenergetic Positron Beams

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著者

    • Kudo Jun
    • Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kouhoku-ku, Yokohama 222-0033, Japan
    • Nishikawa Satoshi
    • Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kouhoku-ku, Yokohama 222-0033, Japan
    • Ohdaira Toshiyuki
    • National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
    • Suzuki Ryoichi
    • National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
    • Mikado Tomohisa
    • National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

抄録

Metal–oxide–semiconductor structures consisting of HfSiOx as the gate dielectric were characterized by using monoenergetic positron beams. 200-nm-thick polycrystalline-Si (poly-Si) and 5-nm HfSiOx films were grown on Si substrates by chemical vapor deposition. Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons were measured as a function of incident positron energy for ion-implanted and unimplanted samples. For the unimplanted sample after rapid thermal annealing (RTA: 1030°C, 10 s), the lifetime of positrons in the HfSiOx film was $448\pm 2$ ps. Since the obtained lifetime was longer than the lifetime of positrons trapped by point defects in metal oxides, the positrons in HfSiOx films were considered to annihilate from the trapped state by open spaces which exist intrinsically in their amorphous structure. After P+, As+ and BF$_{2}^{+}$-implantation into the poly-Si film and RTA, the lifetime of positrons was 420–430 ps. This decrease in the lifetime was attributed to the shrinkage of the open spaces in the HfSiOx film due to the accumulation of implanted impurities in the film during RTA. The diffusion length of positrons in Si substrates was found to depend on the implanted species of ions. This fact was attributed to the electric field introduced by charged defects in the HfSiOx films.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(4A), 1254-1259, 2004-04-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012859094
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6930915
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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