Fabrication of Semiconductor Laser for Integration with Optical Isolator

• Sakurai Kazumasa

  Graduate School of Science and Engineering, Tokyo Institute of Technology

• Yokoi Hideki

  Graduate School of Science and Engineering, Tokyo Institute of Technology Optoelectronic Industry and Technology Development Association, Sumitomo Edogawabashiekimae Bldg. 7F

• Mizumoto Tetsuya

  Graduate School of Science and Engineering, Tokyo Institute of Technology Optoelectronic Industry and Technology Development Association, Sumitomo Edogawabashiekimae Bldg. 7F

• Miyashita Daisuke

  Graduate School of Engineering, The University of Tokyo

• Nakano Yoshiaki

  Graduate School of Engineering, The University of Tokyo Optoelectronic Industry and Technology Development Association, Sumitomo Edogawabashiekimae Bldg. 7F

Abstract

As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry–Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (4A), 1388-1392, 2004

  The Japan Society of Applied Physics

Keywords

• monolithic integration
• wafer direct-bonding
• selective-area growth
• focused ion beam
• laser diode
• optical isolator

Details

• CRID: 1390001206264373120
• NII Article ID: 10012859653
• NII Article ID: 130004531797
• NII Article ID: 210000055202
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.43.1388
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 6931307
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6931307
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.1388
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.1388/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed