Dielectric Relaxation Behavior of Ag(Ta,Nb)O3 Interdigital Capacitors on Oxide Substrates

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The time-dependent dielectric relaxation behavior of Ag(Ta,Nb)O3 interdigital capacitors was investigated for tunable device applications. Ag(Ta,Nb)O3 thin films, which have high $k$-factor (tunability/loss tangent), were deposited on the oxide substrates by pulsed laser deposition technique. Ag(Ta,Nb)O3 thin film on the LaAlO3 substrate has an epitaxial relationship with the substrate. The observed tunabilities and $K$-factors of Ag(Ta,Nb)O3/LaAlO3 and Ag(Ta,Nb)O3/Al2O3 interdigital capacitors were 5.9% and 17.8 and 3.8% and 9.9, respectively, at $\pm 40$ V (maximum electric field of 100 kV/cm), 300 K, and 1 MHz. Capacitance relaxation follows the power law $C(t)=C_{\infty}+C_{0}(t/1s)^{-\beta}$ with a very small exponent negligibly fitted in the time domain. Due to this small exponent, the capacitance was changed by less than 0.05% in 2 V in 71 s. Time-dependent leakage current was measured by employing the Ag(Ta,Nb)O3(0.4 μm)/Al2O3 interdigital capacitor. The time-dependent relaxation current follows the power law $j(t)=j_{\text{leak}}+j_{0}(t/1s)^{-\alpha}$ with an exponent $\alpha=0.98$, $j_{\text{leak}}=1.14\times 10^{-14}$, and $j_{0}=11.42$ s.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(4A), 1434-1437, 2004-04-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012859777
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6931398
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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