二酸化シリコン薄膜(SiO_2)の電子線照射損傷を定量的に評価する Evaluation of the Extent of Electron Irradiation Damage on SiO_2/Si
In order to determine the extent of electron irradiation damage on silicon dioxide quantitatively, a simple method of measuring the decomposition cross section of SiO<Sub>2</Sub>/Si samples from the Si LVV intensity peaks has been proposed. A 100 nm SiO<Sub>2</Sub> film on Si, damaged by the electron irradiation at primary electron energies of 3, 5, 10 and 15 keV was studied. As a result, CDE(critical dose electrons) were able to be determined from the curve fit to Si LVV metallic peaks from the 2-stage exchange equation. The primary electron energy dependence of CDE for SiO<Sub>2</Sub> could be described by Dc(critical dose electrons) ∝ lnEp(primary electron energy).
- 表面科学 = Journal of The Surface Science Society of Japan
表面科学 = Journal of The Surface Science Society of Japan 25(4), 212-216, 2004-04-10
The Surface Science Society of Japan