低温・低ダメージプロセスによるインジウム-スズ酸化物(ITO)薄膜の作製 Preparations of ITO Thin Films by Low Temperature and Low Damage Process

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We deposited indium-tin oxide (ITO) thin films as transparent conductive electrode on no heating substrate by the facing targets sputtering system. The substrate temperature during the deposition was lower than 40°C. The ITO film showed resistivity of 5.2 × 10<SUP>-4</SUP> Ω·cm and light transmittance over 90% at 550 nm, which was obtained by changing deposition pressure and O<SUB>2</SUB> gas flow rate during the deposition. Surface morphology and the crystal structure were analyzed by AFM and XRD, respectively. Surface average roughness Ra and surface maximum roughness Rmax were 0.46 nm and 7.4 nm, respectively. The XRD analysis revealed entirely amorphous structure. <BR>We also obtained the ITO films with resistivity of 4.1 × 10<SUP>-4</SUP> Ω·cm by stable low voltage sputtering with DC + RF discharge.

収録刊行物

  • 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN

    真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN 47(3), 187-190, 2004-03-20

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10012867122
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    6930002
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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