Si(001)とSi(111)表面の極薄酸化膜形成過程の比較 Comparison of the Initial Oxidation Kinetics between Si(001) and Si(111) Surfaces

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著者

    • 小川 修一 OGAWA Syuichi
    • 東北大学多元物質科学研究所 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
    • 高桑 雄二 TAKAKUWA Yuji
    • 東北大学多元物質科学研究所 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

抄録

Real-time reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was applied to investigate the oxide growth kinetics during initial oxidation on Si (001) 2 × 1 and Si (111) 7 × 7 surfaces. The correlation between the amount of adsorbed oxygen atoms obtained from O KLL Auger electron intensity and the unoxidized surface area estimated from RHEED spot intensities due to 2 × 1 or 7 × 7 structure revealed that adsorbed oxygen was able to migrate on the Si (111) 7 × 7 surface during Langmuir-type adsorption at 580°C, leading to nucleation and lateral growth of oxide as in the oxidation mode of two-dimensional oxide island growth appearing at higher temperatures, while growth of oxide during Langmuir-type adsorption on the Si (001) 2 × 1 surface at 576°C progressed at the random sites where O<SUB>2</SUB> adsorption took place.

収録刊行物

  • 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN

    真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN 47(3), 235-238, 2004-03-20

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10012867227
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    6930117
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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