レーザ堆積法を用いたMgドープCuScO_2(0001)薄膜の作製 Fabrication of Mg-doped CuScO_2(0001) Oriented Films using Pulsed Laser Deposition

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Highly c-axis oriented films of Mg-doped CuScO<SUB>2</SUB> were successfully fabricated on α-Al<SUB>2</SUB>O<SUB>3</SUB> (1120) substrates using a pulsed laser deposition method. X-ray pole figure analysis and RHEED observation showed that the films had twin boundaries. The electrical resistivity of the films was significantly decreased by oxygen radical annealing treatments. The lowest electrical resistivity at room temperature was 3.2 × 10<SUP>-1</SUP> Ω·cm, and the temperature dependence showed semiconducting behavior. The p-type conductivity of the film was confirmed by the Seebeck measurement. The optical transmittance was greater than 60% in the visible/near-infrared region.

収録刊行物

  • 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN

    真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN 47(3), 265-268, 2004-03-20

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10012867289
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    6930183
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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