High Performance of Silicon Oxide Selective Etching Using F2 Gas and Graphite Instead of Perfluorinated Compound Gases

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著者

    • Nagai Mikio Nagai Mikio
    • Department of Quantum Engineering, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
    • Hori Masaru Hori Masaru
    • Department of Quantum Engineering, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
    • Goto Toshio Goto Toshio
    • Department of Quantum Engineering, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan

抄録

We have demonstrated an environmentally benign SiO2 selective-etching process in a magnetron plasma using a graphite target and F2 gas instead of perfluorinated compound (PFC) gases. The top electrode of graphite was supplied with power from two different 13.56 MHz and 450 kHz RF sources. The amount of C-based species in the plasma was controlled by the 450 kHz RF source bias voltage. The F atom density was controlled in the plasma by changing the amount of F2 feed gas. High SiO2/resist selectivity and a vertical etching pattern profile were realized. Microtrenching was suppressed by the injection of high energy electrons.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(4A), L501-L503, 2004-04-01

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012930622
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6904308
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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