Boron Doping for $p$-Type $\beta$-FeSi2 Films by Sputtering Method

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著者

    • Wang Shinan
    • Kankyo Semiconductors Co., Ltd., AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
    • Kuroda Ryo
    • National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Fukuzawa Yasuhiro
    • Kankyo Semiconductors Co., Ltd., AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
    • Mise Takahiro
    • System Engineers' Co., Ltd., Yamato, Kanagawa 242-0001, Japan
    • Otogawa Naotaka
    • Kankyo Semiconductors Co., Ltd., AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
    • Nakayama Yasuhiko
    • Kankyo Semiconductors Co., Ltd., AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
    • Tanoue Hisao
    • National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Makita Yunosuke
    • National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

抄録

High quality epitaxial $\beta$-FeSi2 thin films prepared by alternate Fe/Si multilayers stacking were doped for $p$-type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting $\beta$-FeSi2 films before doping were $n$-type with residual electron concentration of about $2 \times 10^{17}$ cm-3 and mobility of about 200 cm2/V$\cdot$s. After doping with boron, $\beta$-FeSi2 films showed the same epitaxial crystallinity with continuous structure as that of non-doped one. Doping level of $p$-type $\beta$-FeSi2 films with net hole concentration from $3 \times 10^{17}$ to $1 \times 10^{19}$ cm-3 and mobility from 100 to 20 cm2/V$\cdot$s were successfully achieved. Desired net hole concentration was obtained by varying the area ratio of boron chips on silicon target.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(4A), L504-L506, 2004-04-01

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012930631
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6904321
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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