Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum

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著者

    • Sun Ho-Jung Sun Ho-Jung
    • Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
    • Choi Eun Seok Choi Eun Seok
    • Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
    • Kim Nam Kyeong
    • Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
    • Yeom Seung Jin
    • Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
    • Roh Jae-Sung
    • Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
    • Sohn Hyun-Chul
    • Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
    • Kim Jin Woong
    • Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea

抄録

Pt thin films were deposited by the O2-assisted decomposition of an (ethylcyclopentadienyl) trimethylplatinum [(EtCp)PtMe3] precursor, and their growth behavior was investigated by varying the amount of oxygen gas supply. An abrupt change from a very low growth rate to a significantly high growth rate was observed with an increase in O2 feeding rate, which indicated that an oxygen gas supply above a threshold was required to obtain a continuous Pt film with an acceptable growth rate. Under the deposition conditions of a substrate temperature of 340°C and an O2 flow rate of 1000 sccm, we successfully fabricated a Pt film with a smooth surface, (111)-preferred orientation, and low resistivity of 11.6 μ$\Omega$-cm on a 200-mm-diameter-wafer.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(5A), L624-L627, 2004-05-01

    Japan Society of Applied Physics

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キーワード

各種コード

  • NII論文ID(NAID)
    10012930762
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6937999
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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