Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching

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著者

    • Gao Yan Gao Yan
    • Materials Department, University of California, Santa Barbara CA, 93106-5050, U. S. A.
    • Fujito Kenji
    • NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, U. S. A.
    • Denbaars Steven P.
    • Materials Department, University of California, Santa Barbara CA, 93106-5050, U. S. A.
    • Nakamura Shuji
    • Materials Department, University of California, Santa Barbara CA, 93106-5050, U. S. A.
    • Hu Evelyn L.
    • Materials Department, University of California, Santa Barbara CA, 93106-5050, U. S. A.

抄録

A photo-enhanced chemical wet etching technique is presented to form a roughened surface morphology with hexagonal symmetry on laser lift-off (LLO) N-face GaN grown by metalorganic chemical vapor deposition (MOCVD). An aqueous solution of KOH was used as etch electrolyte. The etched surface showed cones with hexagonal pyramid structures bound by $\{10\bar{1}\bar{1}\}$ facets. A detailed analysis of the etch rates and time-evolution of the surface morphology is described as a function of KOH concentration (1.25 M to 8.8 M). The comparison between $(000\bar{1})$ N-face and Ga-face GaN etch morphology is discussed. This roughened hexagonal surface morphology can be applied to enhance the external efficiency in GaN based light-emitting diodes (LEDs).

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(5A), L637-L639, 2004-05-01

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012930827
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6938062
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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