Charge-Compensative Ion Substitution of La〔3+〕-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization

• Uchida Hiroshi

  Department of Chemistry, Sophia University

• Okada Isao

  Department of Chemistry, Sophia University

• Matsuda Hirofumi

  Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST)

• Iijima Takashi

  Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST)

• Watanabe Takayuki

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• Funakubo Hiroshi

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

書誌事項

タイトル別名

• Charge-Compensative Ion Substitution of La3+-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
• Charge-Compensative Ion Substitution of La³⁺-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization

抄録

Ferroelectric properties of La³⁺-substituted bismuth titanate (BLT) films were modified by Ti-site substitution using higher-valence ions than the Ti⁴⁺ ion. Thin films of V⁵⁺-, W⁶⁺-, Zr⁴⁺- and nonsubstituted BLT, i.e., (Bi_3.24La_0.75)(Ti_2.97V_0.03)O₁₂ (BLTV), (Bi_3.23La_0.75)(Ti_2.97W_0.03)O₁₂ (BLTW), (Bi_3.25La_0.75)(Ti_2.97Zr_0.03)O₁₂ (BLTZ) and (Bi_3.25La_0.75)Ti_3.00O₁₂, respectively, were fabricated on (111)Pt/Ti/SiO₂/(100)Si substrates by chemical solution deposition. These films consisted of isotropic granular structures without a preferred crystal orientation. Remanent polarizations (P_r) of the BLTV and BLTW films (13 and 12 μC/cm², respectively) were larger than those of the BLT and BLTZ films (8 and 9 μC/cm², respectively), while those films had similar coercive fields (E_c) of approximately 120 kV/cm. BLTV and BLTW films also had lower leakage current densities (approximately 10⁻⁸ A/cm² at 100 kV/cm) than that of BLT film (approximately 10⁻⁶ A/cm² at 100 kV/cm). As no obvious difference was found in the crystal orientation or the microstructure, the enhancement of the P_r value and suppression of the leakage current density could be achieved on a BLT film by the charge compensation using higher-valence ions than the Ti⁴⁺ ion.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (5A), 2636-2639, 2004

  The Japan Society of Applied Physics

キーワード

• ferroelectrics
• bismuth titanate
• chemical solution deposition
• polycrystalline film
• ion substitution
• <I>P</I>-<I>E</I> hysteresis loop
• leakage current density

詳細情報

• CRID: 1390282681241674752
• NII論文ID: 10012947616
• NII論文ID: 130004531953
• NII論文ID: 210000055500
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.43.2636
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6942230
• Web Site: http://id.ndl.go.jp/bib/6942230
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6942230
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.2636
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.2636/pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
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