Charge-Compensative Ion Substitution of La3+-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
-
- Uchida Hiroshi
- Department of Chemistry, Sophia University
-
- Okada Isao
- Department of Chemistry, Sophia University
-
- Matsuda Hirofumi
- Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
-
- Iijima Takashi
- Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
-
- Watanabe Takayuki
- Department of Innovative and Engineered Materials, Tokyo Institute of Technology
-
- Funakubo Hiroshi
- Department of Innovative and Engineered Materials, Tokyo Institute of Technology
Bibliographic Information
- Other Title
-
- Charge-Compensative Ion Substitution of La〔3+〕-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
- Charge-Compensative Ion Substitution of La<sup>3+</sup>-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
Search this article
Abstract
Ferroelectric properties of La3+-substituted bismuth titanate (BLT) films were modified by Ti-site substitution using higher-valence ions than the Ti4+ ion. Thin films of V5+-, W6+-, Zr4+- and nonsubstituted BLT, i.e., (Bi3.24La0.75)(Ti2.97V0.03)O12 (BLTV), (Bi3.23La0.75)(Ti2.97W0.03)O12 (BLTW), (Bi3.25La0.75)(Ti2.97Zr0.03)O12 (BLTZ) and (Bi3.25La0.75)Ti3.00O12, respectively, were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by chemical solution deposition. These films consisted of isotropic granular structures without a preferred crystal orientation. Remanent polarizations (Pr) of the BLTV and BLTW films (13 and 12 μC/cm2, respectively) were larger than those of the BLT and BLTZ films (8 and 9 μC/cm2, respectively), while those films had similar coercive fields (Ec) of approximately 120 kV/cm. BLTV and BLTW films also had lower leakage current densities (approximately 10−8 A/cm2 at 100 kV/cm) than that of BLT film (approximately 10−6 A/cm2 at 100 kV/cm). As no obvious difference was found in the crystal orientation or the microstructure, the enhancement of the Pr value and suppression of the leakage current density could be achieved on a BLT film by the charge compensation using higher-valence ions than the Ti4+ ion.
Journal
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 43 (5A), 2636-2639, 2004
The Japan Society of Applied Physics
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390282681241674752
-
- NII Article ID
- 10012947616
- 130004531953
- 210000055500
-
- NII Book ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL BIB ID
- 6942230
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed