Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor

• Kamimura Takafumi

  Univ. of Tsukuba CREST, Japan Science and Technology Agency

• Yamamoto Kazuhiro

  CREST, Japan Science and Technology Agency National Institute of Advanced Industrial Science and Technology

• Matsumoto Kazuhiko

  CREST, Japan Science and Technology Agency National Institute of Advanced Industrial Science and Technology Osaka Univ.

Abstract

The effects of ultra low nitrogen ion irradiation on room-temperature-operated carbon nanotube channel single-electron transistor have been investigated. The ion irradiation energy was 30 eV and the total number of ions was 2.5×10¹⁴ ions/cm² and 3.7×10¹⁵ ions/cm². After the irradiation, the Coulomb diamonds became larger with increasing in density of irradiated ions. Nitrogen ion irradiation was found to be effective in reducing the quantum dots size in the carbon nanotube channel single-electron transistor.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (5A), 2771-2773, 2004

  The Japan Society of Applied Physics

Keywords

• carbon nanotube
• ion irradiation
• nitrogen-ion
• single electron transistor
• room temperature
• defect
• Coulomb diamond

Details

• CRID: 1390001206264850688
• NII Article ID: 10012948145
• NII Article ID: 210000055534
• NII Article ID: 130004531998
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.43.2771
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 6942510
• Web Site: http://id.ndl.go.jp/bib/6942510
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6942510
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.2771
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.2771/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed