Retention and Read Endurance Characteristics of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode

• Khoa Tran Dang

  Japan Advanced Institute of Science and Technology

• Horita Susumu

  Japan Advanced Institute of Science and Technology

Abstract

Fundamental characteristics such as retention and read endurance of a ferroelectric gate field effect transistor (F-FET) memory with an intermediate electrode were investigated and reported. It was verified that the retention time of the new F-FET was longer than 98 h. By taking into account the leakage currents of both the ferroelectric capacitor C_f and the MOSFET used for data writing (W-FET), we found that, for positive reading voltage, the leakage currents of the ferroelectric capacitor and the W-FET are unfavorable for the P_r⁺ state and the P_r⁻ state, respectively, in terms of read endurance. The overall read endurance is determined by a competition between the leakage currents of the C_f and the W-FET. The drain-connected configuration (DCC) was effective to minimize the unexpected influence of the leakage current of the W-FET.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (4B), 2220-2225, 2004

  The Japan Society of Applied Physics

Keywords

• ferroelectric film
• ferroelectric capacitor
• ferroelectric devices
• ferroelectric memories
• FET

Details

• CRID: 1390282681240392832
• NII Article ID: 10012949833
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.43.2220
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 6939858
• Web Site: http://id.ndl.go.jp/bib/6939858
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6939858
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.2220
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.2220/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed