Photoinduced Gate Modulation and Temperature Dependence in the Coulomb Staircase of Organic Single Electron Tunneling Junctions

• Noguchi Yutaka

  Department of Physical Electronics, Tokyo Institute of Technology

• Manaka Takaaki

  Department of Physical Electronics, Tokyo Institute of Technology

• Iwamoto Mitsumasa

  Department of Physical Electronics, Tokyo Institute of Technology

抄録

Threshold voltage shift in the Coulomb staircase induced by photoirradiation, that is, photoinduced gate modulation, was observed at a temperature of 15 K. The samples denoted by Au/PI/CuttbPc/PI/Al consisted of Kapton-type polyimide (PI) spin-coated films with copper tetra-t-butyl phthalocyanine (CuttbPc), sandwiched between Au and Al electrodes. The temperature dependence of the Coulomb staircase was also examined within the range of 15 K to 300 K. The single electron tunneling process was dominant below 150 K, whereas a thermally assisted electron conduction mechanism such as the hopping mechanism was dominant above 150 K. It was found that the photoinduced gate modulation and the temperature dependence observed in the Coulomb staircase of our junctions could be well explained by taking into account the space charge behavior at the metal/organic ultra-thin film interface.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (4B), 2357-2361, 2004

  The Japan Society of Applied Physics

キーワード

• Coulomb staircase
• single electron tunneling
• molecular electronics
• interfacial space charge

詳細情報

• CRID: 1390001206264051840
• NII論文ID: 10012950243
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.43.2357
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6940081
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6940081
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.2357
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.2357/pdf
• 本文言語コード: en
• データソース種別:
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