窒素ドープしたα炭化珪素セラミックスのピエゾ抵抗効果 Piezoresistance Properties of α Silicon Carbide Ceramics Doped with Nitrogen

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α-silicon carbide ceramics with different nitrogen content were fabricated by changing the post-HIP nitrogen gas pressure. Resultant silicon carbide ceramics were all n-type semiconductors in which doped nitrogen played a role of donor. With the doping pressure up to 150MPa, incorporated nitrogen were dissolved into silicon carbide. Lattice parameter, carrier concentration and piezoresistance coefficient changed in accordance with the solution content. Over 150MPa, nitrogen incorporation continued to increase while nitrogen solution was saturated.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 51(5), 346-349, 2004-05-15

    一般社団法人 粉体粉末冶金協会

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各種コード

  • NII論文ID(NAID)
    10013067991
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    6967696
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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