Oxidation Resistance of Cr-N-O Thin Films Prepared by Pulsed Laser Deposition

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Chromium oxynitride (Cr-N-O) thin films have been successfully prepared by using pulsed laser deposition (PLD). The oxygen content in the thin films (<i>x</i>) was controlled by changing experimental conditions. The Cr-N-O thin films with <i>x</i> = 30at. %, which had NaCl (B1) structure at room temperature (RT), maintained B1 phase even at <i>T</i>= 800°C. Moreover, Vickers hardness of such thin films was clarified to be approximately 3000 in the <i>T</i> ranging from RT to 800°C.

収録刊行物

  • 電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society

    電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society 124(6), 496-500, 2004-06-01

    一般社団法人 電気学会

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各種コード

  • NII論文ID(NAID)
    10013069333
  • NII書誌ID(NCID)
    AN10136312
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    03854205
  • NDL 記事登録ID
    6973436
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-793
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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