Tendency of Loop Formation of Oligosilsesquioxanes Obtained from (4-Substituted phenyl)trimethoxysilane Catalyzed by Benzyltrimethylammonium Hydroxide in Benzene

• Pakjamsai Chitsakon

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

• Kawakami Yusuke

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

抄録

Products in hydrolysis of (4-substituted phenyl)trimethoxysilane in the presence of benzyltrimethylammonium hydroxide in benzene was studied by matrix-assisted laser desorption/ionization-time of flight mass spectroscopy. In the benzene soluble fraction of 4 h reaction, oligosilsesquioxanes containing 6 to 9 silicon atoms with or without loops were observed. (4-Dimethylaminophenyl)trimethoxysilane gave the fraction containing 6 silicon atoms the least (3%), and 9 silicon fraction the most (36%). Oligosilsesquioxanes containing 9 silicon atoms were formed the least among the products for [4-methoxy- (10%), 4-methyl- (22%), non- (3%), and 4-phenyl- (13%) substituted phenyl]trimethoxysilanes. Oligosilsesquioxanes containing 6 to 8 silicon atoms were the major components of the product irrespective of the substituent. Maximum degree of condensation (f) was 0.8 for S₈, and fully condensed structure was not found. The maximum f=1.00, and completely closed loop was found in S₉ with one OH group remaining.

収録刊行物

• Polymer Journal

  Polymer Journal 36 (6), 455-464, 2004

  The Society of Polymer Science, Japan

キーワード

• Phenyltrimethoxysilane
• Hydrolysis
• Intra and Intermolecular Condensation
• Substituent Effect
• MALDI-TOF Mass Spectroscopy
• Degree of Condensation
• Silsesquioxane with Loop

詳細情報

• CRID: 1390282681264925056
• NII論文ID: 10013081145
• NII論文ID: 30001923904
• NII書誌ID: AA00777013
• DOI: 10.1295/polymj.36.455
• ISSN: 13490540
• ISSN: 00323896
• NDL書誌ID: 6968113
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6968113
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可