Novel Electron-Beam Molecular Resists with High Resolution and High Sensitivity for Nanometer Lithography

この論文にアクセスする

この論文をさがす

著者

    • KADOTA Toshiaki
    • Department of Applied Chemistry, Faculty of Engineering, Osaka University
    • KAGEYAMA Hiroshi
    • Department of Applied Chemistry, Faculty of Engineering, Osaka University
    • WAKAYA Fujio
    • Department of Electronics and Materials Physics, School of Engineering Science, Osaka University
    • GAMO Kenji
    • Department of Electronics and Materials Physics, School of Engineering Science, Osaka University
    • SHIROTA Yasuhiko
    • Department of Applied Chemistry, Faculty of Engineering, Osaka University

抄録

A novel class of chemically-amplified, electron-beam molecular resists for nanometer lithography were created. These molecular resists functioned as positive resists in the presence of an acid generator, exhibiting a high sensitivity of ≈2 μC cm<SUP>−2</SUP> and enabling the fabrication of ≈25 nm line patterns.

収録刊行物

  • Chemistry letters

    Chemistry letters 33(6), 706-707, 2004-06-05

    公益社団法人 日本化学会

参考文献:  7件中 1-7件 を表示

  • <no title>

    OKAMURA H.

    J. Polym. Sci. Part A : Polym. Chem. 40, 3055, 2002

    被引用文献2件

  • <no title>

    SHIRAI M.

    Chem. Mater. 15, 4075, 2003

    被引用文献2件

  • <no title>

    SHIROTA Y.

    J.Mater.Chem. 10, 1, 2000

    被引用文献22件

  • <no title>

    WILLSON C. G.

    J. Electrochem. Soc. 133, 181, 1986

    被引用文献9件

  • <no title>

    REICHMANIS E.

    Macromol. Symp. 175, 185, 2001

    被引用文献1件

  • <no title>

    ARIMITSU K.

    J. Mater. Chem. 11, 295, 2001

    被引用文献2件

  • <no title>

    YOSHIIWA M.

    Appl. Phys. Lett. 69, 2605, 1996

    被引用文献5件

被引用文献:  1件中 1-1件 を表示

各種コード

  • NII論文ID(NAID)
    10013105776
  • NII書誌ID(NCID)
    AA00603318
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    03667022
  • データ提供元
    CJP書誌  CJP引用  J-STAGE 
ページトップへ