Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures

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The radiative recombination of a two-dimensional electron gas (2DEG) was investigated in Al0.30Ga0.70N/GaN single heterostructures (SHs) without intentionally doping the barrier material, i.e., where the 2DEG appears at the interface due only to polarization effects. In addition to the typical excitonic transitions and the LO-phonon replicas originating from the GaN flat-band region, the photoluminescence spectra displayed three well-defined transitions. Their small binding energies and the observed blue shift with the excitation density suggested the association of these new emissions to quasi-2D excitons. On the basis of the thermal and excitation power dependences, the transitions were assigned to interface excitonic lines. Applying a weak electric field parallel to the growth direction, which depletes the triangular well, corroborated the 2DEG nature.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(6A), 3360-3366, 2004-06-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

参考文献:  29件中 1-29件 を表示

  • <no title>

    AMBACHER O.

    J. Phys. D 31, 2653, 1998

    被引用文献4件

  • <no title>

    CHRISTENSEN N. E.

    Gallium Nitride II, 1999

    被引用文献1件

  • <no title>

    WILLARDSON R. K.

    Gallium Nitride I, 1998

    被引用文献1件

  • <no title>

    HULL R.

    Nitride Semiconductors and Devices, 1999

    被引用文献1件

  • <no title>

    DIMITROV R.

    Jpn. J. Appl. Phys. 38, 4962, 1999

    被引用文献1件

  • <no title>

    BERGMAN J. P.

    Appl.Phys.Lett. 69, 3456, 1996

    被引用文献3件

  • <no title>

    BERGMAN J. P.

    Phys. Rev. B 58, 1442, 1998

    被引用文献1件

  • <no title>

    KI KWON Ho

    J. Appl. Phys. 90, 1817, 2001

    被引用文献1件

  • <no title>

    WANG T.

    Phys. Rev. B 63, 205320, 2001

    被引用文献1件

  • <no title>

    DALFORS J.

    MRS Internet J. Nitride Semicond. Res. 4, 7, 1999

    被引用文献1件

  • <no title>

    SHEN B.

    Appl. Phys. Lett. 76, 679, 2000

    被引用文献2件

  • <no title>

    ALFEROV Zh. I.

    Pis'ma Zh. Eksp. Teor. Fiz. 43, 442, 1986

    被引用文献1件

  • <no title>

    SHEN J. X.

    Solid State Commun. 106, 495, 1998

    被引用文献2件

  • <no title>

    BASTARD G.

    Wave Mechanics Applied to Semiconductor Heterostructures, 1992

    被引用文献1件

  • <no title>

    POLLAND H. J.

    Phys. Rev. Lett. 55, 2610, 1985

    被引用文献2件

  • <no title>

    DIMITROV R.

    Phys. Status Solidi A 168, R7, 1998

    被引用文献1件

  • <no title>

    YUAN Y. R.

    J. Appl. Phys. 58, 397, 1985

    被引用文献1件

  • <no title>

    BERGMAN J. P.

    Phys. Rev. B 43, 4771, 1991

    被引用文献1件

  • <no title>

    WEEGELS L. W.

    Phys. Rev. B 46, 3886, 1992

    被引用文献1件

  • <no title>

    GILLILAND D. G.

    Phys. Rev. B 49, 8113, 1994

    DOI 被引用文献1件

  • <no title>

    GILLILAND G. D.

    J. Vac. Sci. Technol. B 9, 2377, 1991

    被引用文献1件

  • <no title>

    SHEN J. X.

    Phys. Rev. B 59, 8093, 1999

    被引用文献1件

  • <no title>

    SHEN J. X.

    Phys. Rev. B 64, 195321, 2001

    被引用文献1件

  • <no title>

    MARTINEZ-CRIADO G.

    J. Appl. Phys. 90, 4735, 2001

    被引用文献1件

  • <no title>

    MARTINEZ-CRIADO G.

    J. Appl. Phys. 90, 5627, 2001

    DOI 被引用文献2件

  • <no title>

    REYNOLDS D. C.

    J.Appl.Phys. 80, 594, 1996

    DOI 被引用文献2件

  • <no title>

    BLUDAU W.

    Phys. Rev. B 13, 5410, 1976

    被引用文献1件

  • <no title>

    MENDEZ E. E.

    Physica B 117, 118, 711, 1983

    被引用文献1件

各種コード

  • NII論文ID(NAID)
    10013154462
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6974829
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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