High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source

• Matsuyama Tetsuya

  Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University

• Takikita Hisaya

  Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University

• Horinaka Hiromichi

  Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University

• Wada Kenji

  Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University

• Nakanishi Tsutomu

  Department of Physics, Faculty of Science, Nagoya University

• Okumi Shoji

  Department of Physics, Faculty of Science, Nagoya University

• Nishitani Tomohiro

  Department of Physics, Faculty of Science, Nagoya University

• Saka Takashi

  Department of Applied Electronics, Daido Institute of Technology

• Kato Toshihiro

  Research & Development Laboratory, Daido Steel Co., Ltd.

抄録

We measured a spin-dependent luminescence from a GaAs–GaAsP strained layer superlattice and GaAs substrate to evaluate the spin polarization of conduction band electrons excited by circularly polarized light. The GaAs–GaAsP strained layer superlattice with a mixture of group-V elements, As and P, was considered as a suitable spin-polarized electron source because the discrepancy of the valence band was reported to be larger than that of the conduction band. The observed maximum circular polarizations of the luminescence from the GaAs–GaAsP strained layer superlattice and GaAs substrate were 68% and 15%, respectively. The dependence of the circular polarization of the luminescence on the excitation photon energy was well explained by the calculated band structure. The initial spin polarizations of conduction band electrons excited in the GaAs–GaAsP strained layer superlattice and GaAs substrate were estimated to be 95% and 46%, respectively, from the luminescence polarization, lifetime and spin relaxation time. The high initial spin polarization of conduction band electrons proved the high performance of a photocathode with the GaAs–GaAsP strained layer superlattice as the spin-polarized electron source.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (6A), 3371-3375, 2004

  The Japan Society of Applied Physics

キーワード

• luminescence polarization
• spin-polarized electron source
• GaAs–GaAsP
• strained layer superlattice
• photocathode
• circularly polarized light

詳細情報

• CRID: 1390282681242539648
• NII論文ID: 10013154511
• NII論文ID: 130004532210
• NII論文ID: 210000055678
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.43.3371
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6974851
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6974851
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.3371
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.3371/pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
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• 抄録ライセンスフラグ: 使用不可