Optical and Thermal Properties of Si–O–C Films Grown by Organic Catalytic Chemical Vapor Deposition Using Organic Silicon

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Optical, thermal and mechanical properties of Si–O–C ternary alloy films grown by organic catalytic chemical vapor deposition (CVD) were studied in comparison with those of Si–O films grown by electron-beam evaporation and AlN grown by electron cyclotron resonance sputtering. Si–O–C with Si: 36 at.%, O: 46 at.%, and C: 18 at.%, grown using TEOS, shows a relatively high refractive index of around 1.9 and a small extinction coefficient of less than 0.01 at wavelengths between 500 nm and 1000 nm. The value of the extinction coefficient is roughly five times smaller than that of SiO films grown by electron-beam evaporation. The thermal conductivity of 0.64 W/m$\cdot$K and the stress of the film are comparable with those of SiO. The results indicate that Si–O–C grown by organic catalytic CVD using TEOS is a promising material for optical applications such as laser diodes and semiconductor optical amplifiers.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(6A), 3530-3534, 2004-06-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10013155108
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6975305
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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