Formation of Self-organized GaN Dots on Al0.11Ga0.89N by Alternating Supply of Source Precursors

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著者

    • Yen Kao-Hsi
    • Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
    • Lee Ling
    • Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
    • Chen Wei-Kuo
    • Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
    • Chou Wu-Ching
    • Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
    • Lee Ming-Chih
    • Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
    • Chen Wen-Hsiung
    • Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
    • Lin Wen-Jen
    • Chung-Shan Institute of Science and Technology, Tao-Yuan 325, Taiwan, Republic of China
    • Cheng Yi-Cheng
    • Chung-Shan Institute of Science and Technology, Tao-Yuan 325, Taiwan, Republic of China
    • Cherng Ya-Tong
    • Chung-Shan Institute of Science and Technology, Tao-Yuan 325, Taiwan, Republic of China

抄録

The self-organized GaN dot structure is successfully grown on a slightly lattice-mismatched Al0.11Ga0.89N epilayer using flow-rate modulation epitaxy (FME) growth technique. From the variation of dot density with growth temperature, we can observe that the GaN dot growth is controlled predominately by the surface diffusion of Ga adatoms at substrate temperatures below 915°C and by re-evaporation at higher temperatures. Because of the special alternating gas supply feature in FME, during the Ga source step, it is the Ga metal that is deposited on the underlying Al0.11Ga0.89N layer. This is because of the large lattice mismatch of 41.8% between the Ga metal (4.51 Å) and Al0.11Ga0.89N (3.18 Å). We consider that the GaN dot growth in our study is mainly through the Volmer-Weber growth mode, not the commonly used Stranski-Krastanow growth mode.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(6B), L780-L783, 2004-06-15

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10013161309
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6971729
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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