An Analysis of the Anomalous Dip in Scattering Parameter $S_{11}$ of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)

この論文にアクセスする

この論文をさがす

著者

抄録

The anomalous dip in scattering parameter $S_{11}$ of InGaP/GaAs heterojunction bipolar transistors (HBTs) is explained quantitatively. Our results show that for InGaP/GaAs HBTs, the input impedance can be represented by a "shifted" series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies. The appearance of the anomalous dip of $S_{11}$ in a Smith chart is caused by this inherent ambivalent characteristic of the input impedance. It is found that under constant collector-emitter voltage ($V_{\text{CE}}$), an increase of base current (which corresponds to a decrease of base-emitter resistance and an increase of transconductance) enhances the anomalous dip. In addition, the anomalous dip in $S_{11}$ of InGaP/GaAs HBTs can also be interpreted in terms of poles and zeros.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(6B), L803-L805, 2004-06-15

    Japan Society of Applied Physics

参考文献:  8件中 1-8件 を表示

  • <no title>

    LIN Y. S.

    IEEE Trans. Electron Devices 50, 525, 2003

    被引用文献1件

  • <no title>

    TU H. Y.

    IEEE Trans. Electron Devices 49, 1831, 2002

    被引用文献2件

  • <no title>

    LU S. S.

    IEEE Trans. Microwave Theory & Techniques 49, 406, 2001

    被引用文献1件

  • <no title>

    AOKI Y.

    High Power GaAs FET Amplifiers 81, 1993

    被引用文献1件

  • <no title>

    LIU William

    Handbook of III-V Heterojunction Bipolar Transistors 1153

    被引用文献1件

  • <no title>

    ALI F.

    Devices, Fabrication, and Circuits 305, 1991

    被引用文献1件

  • <no title>

    BOUSNINA S.

    IEEE MTT-S Dig. (2000), 1397-1400, 2000

    被引用文献1件

  • High-reliability InGaP/GaAs HBTs fabricated by self-aligned process

    TAKAHASHI T.

    Tech. Dig. IEEE Int. Electron Devices Meeting, 1994, 1994

    被引用文献5件

各種コード

  • NII論文ID(NAID)
    10013161406
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6971861
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ