高TCR白金薄膜の開発 Development of High TCR Platinum Thin Films

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High Temperature Coefficient of Resistance (TCR) platinum (Pt) thin films become increasingly attractive for devices with Micro Electro Mechanical Systems (MEMS) using high temperature. However, in annealing with high temperature, Pt thin films are degraded, and in comparison with bulk Pt, the TCR of Pt thin films are inferior. In this study, alumina (Al<sub>2</sub>O<sub>3</sub>) buffer layers were introduced between the silicon nitride (SiNx) films and Pt films. After annealing in the air, the structure of Pt thin films was observed by Scanning Electron Microscope (SEM) and analyzed by X-ray diffraction, and the depth-resolved elemental composition of interface between Pt thin films and Al<sub>2</sub>O<sub>3</sub> buffer layers was observed by Secondary Ion Mass Spectrometry (SIMS). As the annealing temperature is higher, the grain size of Pt is larger. At the point of the largest grain size, the largest TCR could not obtain. In this paper, we discuss about the relationship between the structure of Pt thin film and annealing temperature, and about the effect of Al<sub>2</sub>O<sub>3</sub> buffer layers.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 124(7), 242-247, 2004-07-01

    一般社団法人 電気学会

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各種コード

  • NII論文ID(NAID)
    10013268481
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    7020283
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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