Control of Selectivity between SiGe and Si in Isotropic Etching Processes

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抄録

The selectivity between SiGe and Si has been investigated in chemical dry etching. Starting from a pure CF4 process that etches SiGe with a good selectivity to Si, the modification of the gas mixture was studied with the aim of understanding the way these materials are etched in the presence of O2, N2 and/or CH2F2. Passivation phenomena were used to show that invert selectivities can be obtained. Their combination leads to ultrahigh Si:SiGe selectivity.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(6B), 3964-3966, 2004-06-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10013276374
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6996776
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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