Control of Selectivity between SiGe and Si in Isotropic Etching Processes
The selectivity between SiGe and Si has been investigated in chemical dry etching. Starting from a pure CF4 process that etches SiGe with a good selectivity to Si, the modification of the gas mixture was studied with the aim of understanding the way these materials are etched in the presence of O2, N2 and/or CH2F2. Passivation phenomena were used to show that invert selectivities can be obtained. Their combination leads to ultrahigh Si:SiGe selectivity.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(6B), 3964-3966, 2004-06-15
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics