Fine Spectroscopy of Neutral Silicon Atoms

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  • KUNIEDA Akira
    Laser Technology Laboratory, RIKEN (The Institute of Physical and Chemical Research), Department of Electronics and Electrical Engineering, Keio University,
  • KUMAGAI Hiroshi
    Laser Technology Laboratory, RIKEN (The Institute of Physical and Chemical Research), Graduate School of Engineering, Osaka City University
  • IWANE Tetsuaki
    Laser Technology Laboratory, RIKEN (The Institute of Physical and Chemical Research), Department of Electronics and Electrical Engineering, Keio University,
  • SHIMIZU Satoru
    Laser Technology Laboratory, RIKEN (The Institute of Physical and Chemical Research), Department of Electronics and Electrical Engineering, Keio University,
  • MIDORIKAWA Katsumi
    Laser Technology Laboratory, RIKEN (The Institute of Physical and Chemical Research),
  • OBARA Minoru
    Department of Electronics and Electrical Engineering, Keio University,

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Other Title
  • シリコン原子の精密原子分光
  • 光ガルバノ法によるシリコン原子の精密分光
  • ヒカリ ガルバノホウ ニ ヨル シリコン ゲンシ ノ セイミツ ブンコウ

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Abstract

In order to manipulate silicon atoms through laser cooling, it is necessary to detune precisely to the resonant frequency of the 33P1→43Po0 transition of silicon atoms at 252.41 nm, 28.8 MHz of the natural linewidth and 35.4 mW/cm2 of the saturation intensity. In this study, we demonstrated the optogalvanic spectroscopy for silicon atoms with two types of nano-second frequency tripled Ti:sapphire lasers.

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