Characteristic of the Si(100) Surface Low-Temperature Phase with Two Competing Structures Investigated by Rare Gas Adsorption
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- Kimura Tomohiko
- Institute of Applied Physics, 21th Century COE, NANO project
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- Yoshida Shoji
- Institute of Applied Physics, 21th Century COE, NANO project
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- Takeuchi Osamu
- Institute of Applied Physics, 21th Century COE, NANO project
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- Matsuyama Eiji
- Institute of Applied Physics, 21th Century COE, NANO project
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- Oigawa Haruhiro
- Institute of Applied Physics, 21th Century COE, NANO project
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- Shigekawa Hidemi
- Institute of Applied Physics, 21th Century COE, NANO project
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Abstract
The change of the Si(100) surface, exposed to Kr gas at 10 K with the scanning tunneling microscopy (STM) tip being extracted, was observed by STM. For a n-type sample, a p(2×2)/c(4×2) coexisting structure was stably observed even at low Kr coverage, and the amount of the c(4×2) area increased with increasing the coverage. These results clearly show the appearance of the p(2×2) phase at 10 K. The Kr growth process was observed by low-energy electron diffraction measurement for both n- and p-type samples, suggesting the influence of the STM measurement on the c(4×2) structure observed for the p-type sample at 10 K.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (7B), L990-L992, 2004
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390282681241647872
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- NII Article ID
- 10013316568
- 210000057394
- 130004532495
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- NII Book ID
- AA11906093
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- ISSN
- 13474065
- 00214922
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- NDL BIB ID
- 7012558
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed