Selective Dry Etching of Zinc Telluride Using Aluminum Mask

• Guo Qixin

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Matsumoto Yuichi

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Tanaka Tooru

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Nishio Mitsuhiro

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Ogawa Hiroshi

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

抄録

Selective reactive ion etching of zinc telluride using aluminum mask has been investigated. The etching rate for Al mask was determined to be 0.7 nm/min, which is much smaller than that of ZnTe under the same etching condition using CH₄ and H₂ gases. The mask selectivity of Al was determined to be approximately 88 for ZnTe, indicating that the thin layer of Al film can be a good mask for fabricating ZnTe microelectronic devices.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (7A), 4157-4158, 2004

  The Japan Society of Applied Physics

キーワード

• zinc telluride
• CH<SUB>4</SUB> and H<SUB>2</SUB> gases
• reactive ion etching
• selective etching
• Al mask

詳細情報

• CRID: 1390001206265495424
• NII論文ID: 10013317081
• NII論文ID: 210000055865
• NII論文ID: 130004532344
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.43.4157
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.4157
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.4157/pdf
• 本文言語コード: en
• データソース種別:
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  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可