X-ray Absorption Near Edge Structures of Silicon Nitride Thin Film by Pulsed Laser Deposition

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Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al<SUB>2</SUB>O<SUB>3</SUB> (0001) at 1173 K in N<SUB>2</SUB> gas pressure of 0.27 Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-<i>K</i> edge revealed that local arrangement of Si is not random. It should be composed of SiN<SUB>4</SUB> unit similar to the case of α-Si<SUB>3</SUB>N<SUB>4</SUB> crystal. Metallic Si component cannot be found in XANES.

収録刊行物

  • Materials transactions

    Materials transactions 45(7), 2039-2041, 2004-07-20

    公益社団法人 日本金属学会

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各種コード

  • NII論文ID(NAID)
    10013336406
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    7015627
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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