Electron Energy-loss Spectroscopy Characterization of ∼1 nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics

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  • Gu Hui
    State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences

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  • Electron Energy-loss Spectroscopy Characterization of ～1nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics
  • Electron Energy-loss Spectroscopy Characterization of ∼1 nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics

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Abstract

In many ceramic systems thin amorphous films of about 1 nm thickness often cover grain boundaries. These amorphous films play a key role not only in the formation of microstructures but also in the thermal-mechanical properties of ceramic materials. However, such thin amorphous layers could not be probed directly by an analytical electron beam. With the recent advances in spatially-resolved electron energy-loss spectroscopy technique, chemical and physical parameters of the thin films could be successfully derived using the “spectrum separation” approach. Basic characters and behaviors of variations for the inter-granular films are analyzed in a few silicon nitride (Si3N4) and silicon carbide (SiC) systems. The combined local chemical-structural information reveal new trends on microstructures and properties, and provides further insights in Si-based ceramic materials.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 45 (7), 2091-2098, 2004

    The Japan Institute of Metals and Materials

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